Транзистор: N-MOSFET; полевой; 200В; 41А; 310Вт; TO3PN Технические параметры
- Case: TO3PN
- Channel kind: enhanced
- Drain current: 41A
- Drain-source voltage: 200V
- Gate-source voltage: ±30V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 32mΩ
- Polarisation: unipolar
- Power dissipation: 310W
- Type of transistor: N-MOSFET