Транзистор: N-MOSFET; полевой; 1000В; 5А; 225Вт; TO3PN Технические параметры
- Case: TO3PN
- Channel kind: enhanced
- Drain current: 5A
- Drain-source voltage: 1000V
- Gate-source voltage: ±30V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 1.45Ω
- Polarisation: unipolar
- Power dissipation: 225W
- Type of transistor: N-MOSFET