Транзистор: N-MOSFET; полевой; 900В; 5,7А; 280Вт; TO3PN Технические параметры
- Case: TO3PN
- Channel kind: enhanced
- Drain current: 5.7A
- Drain-source voltage: 900V
- Gate-source voltage: ±30V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 1.4Ω
- Polarisation: unipolar
- Power dissipation: 280W
- Type of transistor: N-MOSFET