Транзистор: N-MOSFET; полевой; 600В; 0,18А; 1Вт; TO92 Технические параметры
- Case: TO92
- Channel kind: enhanced
- Drain current: 0.18A
- Drain-source voltage: 600V
- Gate-source voltage: ±30V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 11.5Ω
- Polarisation: unipolar
- Power dissipation: 1W
- Type of transistor: N-MOSFET