Транзистор: N-MOSFET; полевой; 400В; 10,1А; 170Вт; TO220 Технические параметры
- Case: TO220
- Channel kind: enhanced
- Drain current: 10.1A
- Drain-source voltage: 400V
- Gate-source voltage: ±30V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 270mΩ
- Polarisation: unipolar
- Power dissipation: 170W
- Type of transistor: N-MOSFET