Транзистор: N-MOSFET; полевой; 250В; 16,2А; 180Вт; TO220 Технические параметры
- Case: TO220
- Channel kind: enhanced
- Drain current: 16.2A
- Drain-source voltage: 250V
- Gate-source voltage: ±30V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 110mΩ
- Polarisation: unipolar
- Power dissipation: 180W
- Type of transistor: N-MOSFET