Технические параметры
- Case: TO220
- Channel kind: enhanced
- Continuous Drain Current (Id): 32A
- Drain current: 22.6A
- Drain-source voltage: 60V
- Drain-Source Voltage (Vds): 60V
- Fall Time: 110ns
- Gate-Source Voltage: 20V
- Gate-source voltage: ±20V
- Height Units: 3
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 35mΩ
- On-State Resistance: 35mΩ
- Operating Temperature Max.: 175°C
- Operating Temperature Min.: -55°C
- Package Type: TO-220
- Packaging: Tube
- Phases: Single
- Polarisation: unipolar
- Power dissipation: 79W
- Power Dissipation (Pd): 79W
- Reflow Temperature Max.: 300°C
- Rise Time: 210ns
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 60ns
- Turn-ON Delay Time: 15ns
- Type of transistor: N-MOSFET
