Транзистор: N-MOSFET; полевой; 800В; 3,2А; 51Вт; TO220F Технические параметры
- Case: TO220F
- Channel kind: enhanced
- Drain current: 3.2A
- Drain-source voltage: 800V
- Gate-source voltage: ±30V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 2.5Ω
- Polarisation: unipolar
- Power dissipation: 51W
- Type of transistor: N-MOSFET