Транзистор: N-MOSFET; полевой; 100В; 6,3А; 40Вт; IPAK Технические параметры
- Case: IPAK
- Channel kind: enhanced
- Drain current: 6.3A
- Drain-source voltage: 100V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 180mΩ
- Polarisation: unipolar
- Power dissipation: 40W
- Type of transistor: N-MOSFET