Транзистор: N-MOSFET; полевой; 60В; 10,9А; 38Вт; IPAK Технические параметры
- Case: IPAK
- Channel kind: enhanced
- Drain current: 10.9A
- Drain-source voltage: 60V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 60mΩ
- Polarisation: unipolar
- Power dissipation: 38W
- Type of transistor: N-MOSFET