Транзистор: N-MOSFET; полевой; 600В; 1,14А; 44Вт; IPAK Технические параметры
- Case: IPAK
- Channel kind: enhanced
- Drain current: 1.14A
- Drain-source voltage: 600V
- Gate-source voltage: ±30V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 4.7Ω
- Polarisation: unipolar
- Power dissipation: 44W
- Type of transistor: N-MOSFET