Транзистор: N-MOSFET; полевой; 100В; 56А; 200Вт; TO247 Технические параметры
- Case: TO247
- Channel kind: enhanced
- Drain current: 56A
- Drain-source voltage: 100V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 25mΩ
- Polarisation: unipolar
- Power dissipation: 200W
- Type of transistor: N-MOSFET