Транзистор: P-MOSFET; полевой; -30В; -1,5А; 0,8Вт; MCPH6 Технические параметры
- Case: MCPH6
- Channel kind: enhanced
- Drain current: -1.5A
- Drain-source voltage: -30V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 326mΩ
- Polarisation: unipolar
- Power dissipation: 0.8W
- Type of transistor: P-MOSFET