Транзистор: N/P-MOSFET; полевой; комплементарная пара; 30/-30В Технические параметры
- Case: SO8
- Channel kind: enhanced
- Drain current: 3.7/-2.9A
- Drain-source voltage: 30/-30V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 130/210mΩ
- Polarisation: unipolar
- Power dissipation: 2W
- Transistor kind: complementary
- Type of transistor: N/P-MOSFET