Транзистор: N-MOSFET; полевой; 650В; 53А; Idm: 175А; 500Вт; TO247-3 Технические параметры
- Case: TO247-3
- Channel kind: enhanced
- Drain current: 53A
- Drain-source voltage: 650V
- Gate charge: 188нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 33mΩ
- Polarisation: unipolar
- Power dissipation: 500W
- Pulsed drain current: 175A
- Technology: SuperFET®
- Type of transistor: N-MOSFET