Транзистор: N-MOSFET; полевой; 650В; 30А; Idm: 115А; 337Вт; TO247-3 Технические параметры
- Case: TO247-3
- Channel kind: enhanced
- Drain current: 30A
- Drain-source voltage: 650V
- Gate charge: 98нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 65mΩ
- Polarisation: unipolar
- Power dissipation: 337W
- Pulsed drain current: 115A
- Technology: SuperFET®
- Type of transistor: N-MOSFET