Технические параметры
- Technology: SuperFET®
- Drain current: 30A
- Gate charge: 98nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±30V
- Drain-source voltage: 650V
- Pulsed drain current: 115A
- Mounting: THT
- Case: TO247-3
- Type of transistor: N-MOSFET
- On-State Resistance: 65mΩ
- Power dissipation: 337W