Транзистор: N-MOSFET; SiC; полевой; 1,2кВ; 31А; Idm: 136А; 58Вт Технические параметры
- Case: TO247-3
- Channel kind: enhanced
- Drain current: 31A
- Drain-source voltage: 1.2kV
- Gate charge: 56нКл
- Gate-source voltage: -5...20V
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 80mΩ
- Polarisation: unipolar
- Power dissipation: 58W
- Pulsed drain current: 136A
- Technology: SiC
- Type of transistor: N-MOSFET