Технические параметры
- Technology: SiC
- Drain current: 31A
- Gate charge: 56nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: -5...20V
- Drain-source voltage: 1.2kV
- Pulsed drain current: 136A
- Mounting: THT
- Case: TO247-3
- Type of transistor: N-MOSFET
- On-State Resistance: 80mΩ
- Power dissipation: 58W