Транзистор: N-MOSFET; полевой; 650В; 19,5А; Idm: 69А; 240Вт; TO247-3 Технические параметры
- Case: TO247-3
- Channel kind: enhanced
- Drain current: 19.5A
- Drain-source voltage: 650V
- Gate charge: 58нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 0.11Ω
- Polarisation: unipolar
- Power dissipation: 240W
- Pulsed drain current: 69A
- Technology: SuperFET®
- Type of transistor: N-MOSFET