Транзистор: N/P-MOSFET; полевой; комплементарная пара; 20/-8В Технические параметры
- Case: SOT363
- Channel kind: enhanced
- Drain current: 0.46/-0.558A
- Drain-source voltage: 20/-8V
- Gate-source voltage: ±12/±8V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 375/300mΩ
- Polarisation: unipolar
- Power dissipation: 0.14W
- Transistor kind: complementary
- Type of transistor: N/P-MOSFET