Транзистор: N/P-MOSFET; полевой; комплементарная пара; 20В Технические параметры
- Case: SOT963
- Channel kind: enhanced
- Drain current: 0.16/-0.14A
- Drain-source voltage: 20V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±8V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 1.5/5Ω
- Polarisation: unipolar
- Power dissipation: 0.125W
- Transistor kind: complementary
- Type of transistor: N/P-MOSFET