Технические параметры
- Drain current: 0.39/-0.31A
- Channel kind: enhanced
- Polarisation: unipolar
- Transistor kind: complementary
- Gate-source voltage: ±6V
- Drain-source voltage: 20/-20V
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: SOT563-6
- Type of transistor: N/P-MOSFET
- On-State Resistance: 550/900mΩ
- Power dissipation: 0.25W