Транзистор: N/P-MOSFET; полевой; комплементарная пара; 20/-20В Технические параметры
- Case: SOT563-6
- Channel kind: enhanced
- Drain current: 0.39/-0.31A
- Drain-source voltage: 20/-20V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±6V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 550/900mΩ
- Polarisation: unipolar
- Power dissipation: 0.25W
- Transistor kind: complementary
- Type of transistor: N/P-MOSFET