Транзистор: P-MOSFET; полевой; -60В; 100А; 200Вт; DFN5x6 Технические параметры
- Case: DFN5x6
- Channel kind: enhanced
- Drain current: 100A
- Drain-source voltage: -60V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 7.7mΩ
- Polarisation: unipolar
- Power dissipation: 200W
- Type of transistor: P-MOSFET