Технические параметры
- Drain current: -3A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: -60V
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: SOT89
- Type of transistor: P-MOSFET
- On-State Resistance: 266mΩ
- Power dissipation: 3.5W