Технические параметры
- Drain current: -2.9A
- Gate charge: 17.3nC
- Channel kind: enhanced
- Polarisation: unipolar
- Drain-source voltage: -20V
- Pulsed drain current: -16A
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: TSOP6
- Type of transistor: P-MOSFET
- On-State Resistance: 64mΩ