Технические параметры
- Drain current: 0.25A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±30V
- Drain-source voltage: 600V
- Pulsed drain current: 1.6A
- Mounting: THT
- Case: TO92
- Type of transistor: N-MOSFET
- On-State Resistance: 8500mΩ
- Power dissipation: 3W