Технические параметры
- Drain current: 1.6A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±30V
- Drain-source voltage: 1700V
- Pulsed drain current: 10.4A
- Mounting: THT
- Case: TO247
- Type of transistor: N-MOSFET
- On-State Resistance: 13000mΩ
- Power dissipation: 160W