Транзистор: N/P-MOSFET; полевой; 20В; 690мА; Idm: 3,2А; 330мВт Технические параметры
- Case: SOT363
- Channel kind: enhanced
- Drain current: 0.69/-0.548A
- Drain-source voltage: 20/-20V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±6V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.45Ω
- Polarisation: unipolar
- Power dissipation: 0.33W
- Pulsed drain current: 3.2A
- Type of transistor: N/P-MOSFET