Транзистор: N/P-MOSFET; полевой; 20/-20В; 630/-460мА; 530мВт Технические параметры
- Case: SOT563
- Channel kind: enhanced
- Drain current: 0.63/-0.46A
- Drain-source voltage: 20/-20V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±6V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.4/0.7Ω
- Polarisation: unipolar
- Power dissipation: 0.53W
- Type of transistor: N/P-MOSFET