Транзистор: N/P-MOSFET; полевой; 30/-30В; 2,7/-2,4А; Idm: 25?-20А Технические параметры
- Case: TSOT26
- Channel kind: enhanced
- Drain current: 2.7/-2.4A
- Drain-source voltage: 30/-30V
- Gate-source voltage: ±20V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.06/0.095Ω
- Polarisation: unipolar
- Power dissipation: 0.84W
- Pulsed drain current: 25...-20A
- Type of transistor: N/P-MOSFET