Транзистор: P-MOSFET; полевой; -20В; -11А; Idm: -80А; 2,4Вт Технические параметры
- Case: PowerDI®3333-8
- Channel kind: enhanced
- Drain current: -11A
- Drain-source voltage: -20V
- Gate-source voltage: ±8V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.008Ω
- Polarisation: unipolar
- Power dissipation: 2.4W
- Pulsed drain current: -80A
- Type of transistor: P-MOSFET