Транзистор: P-MOSFET; полевой; -20В; -1,5А; Idm: -4А; 850мВт; SOT563 Технические параметры
- Case: SOT563
- Channel kind: enhanced
- Drain current: -1.5A
- Drain-source voltage: -20V
- Gate-source voltage: ±12V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.15Ω
- Polarisation: unipolar
- Power dissipation: 0.85W
- Pulsed drain current: -4A
- Type of transistor: P-MOSFET