Транзистор: P-MOSFET; полевой; -20В; -3А; Idm: -20А; 800мВт; SOT23 Технические параметры
- Case: SOT23
- Channel kind: enhanced
- Drain current: -3A
- Drain-source voltage: -20V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±8V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.062Ω
- Polarisation: unipolar
- Power dissipation: 0.8W
- Pulsed drain current: -20A
- Type of transistor: P-MOSFET