Транзистор: P-MOSFET; полевой; -20В; -600мА; Idm: -2А; 460мВт Технические параметры
- Case: X2-DFN1006-3
- Channel kind: enhanced
- Drain current: -0.6A
- Drain-source voltage: -20V
- Gate-source voltage: ±8V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.97Ω
- Polarisation: unipolar
- Power dissipation: 0.46W
- Pulsed drain current: -2A
- Type of transistor: P-MOSFET