Транзистор: P-MOSFET; полевой; -30В; -10А; Idm: -80А; 940мВт Технические параметры
- Case: PowerDI®3333-8
- Channel kind: enhanced
- Drain current: -10A
- Drain-source voltage: -30V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±25V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.0095Ω
- Polarisation: unipolar
- Power dissipation: 0.94W
- Pulsed drain current: -80A
- Type of transistor: P-MOSFET