Транзистор: P-MOSFET; полевой; -30В; -22А; Idm: -40А; 1,6Вт; TO252 Технические параметры
- Case: TO252
- Channel kind: enhanced
- Drain current: -22A
- Drain-source voltage: -30V
- Gate-source voltage: ±20V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.025Ω
- Polarisation: unipolar
- Power dissipation: 1.6W
- Pulsed drain current: -40A
- Type of transistor: P-MOSFET