Транзистор: P-MOSFET; полевой; -30В; -3,5А; Idm: -25А; 1,6Вт; TSOT26 Технические параметры
- Case: TSOT26
- Channel kind: enhanced
- Drain current: -3.5A
- Drain-source voltage: -30V
- Gate-source voltage: ±25V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.05Ω
- Polarisation: unipolar
- Power dissipation: 1.6W
- Pulsed drain current: -25A
- Type of transistor: P-MOSFET