Транзистор: P-MOSFET; полевой; -30В; -4,3А; Idm: -13А; 1,25Вт; SOT26 Технические параметры
- Case: SOT26
- Channel kind: enhanced
- Drain current: -4.3A
- Drain-source voltage: -30V
- Gate-source voltage: ±20V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.045Ω
- Polarisation: unipolar
- Power dissipation: 1.25W
- Pulsed drain current: -13A
- Type of transistor: P-MOSFET