Транзистор: P-MOSFET x2; полевой; -30В; -3,1А; Idm: -20А; 1,1Вт; SO8 Технические параметры
- Case: SO8
- Channel kind: enhanced
- Drain current: -3.1A
- Drain-source voltage: -30V
- Gate-source voltage: ±20V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.07Ω
- Polarisation: unipolar
- Power dissipation: 1.1W
- Pulsed drain current: -20A
- Type of transistor: P-MOSFET x2