Транзистор: P-MOSFET; полевой; -30В; -2,9А; Idm: -11А; 1,08Вт; SOT23 Технические параметры
- Case: SOT23
- Channel kind: enhanced
- Drain current: -2.9A
- Drain-source voltage: -30V
- Gate-source voltage: ±20V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.07Ω
- Polarisation: unipolar
- Power dissipation: 1.08W
- Pulsed drain current: -11A
- Type of transistor: P-MOSFET