Транзистор: P-MOSFET x2; полевой; -30В; -3,3А; Idm: -15А; 1,8Вт; SO8 Технические параметры
- Case: SO8
- Channel kind: enhanced
- Drain current: -3.3A
- Drain-source voltage: -30V
- Gate-source voltage: ±20V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.065Ω
- Polarisation: unipolar
- Power dissipation: 1.8W
- Pulsed drain current: -15A
- Type of transistor: P-MOSFET x2