Транзистор: P-MOSFET; полевой; -40В; -8,3А; Idm: 80А; 1Вт Технические параметры
- Case: PowerDI®3333-8
- Channel kind: enhanced
- Drain current: -8.3A
- Drain-source voltage: -40V
- Gate-source voltage: ±20V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.013Ω
- Polarisation: unipolar
- Power dissipation: 1W
- Pulsed drain current: 80A
- Type of transistor: P-MOSFET