Транзистор: P-MOSFET x2; полевой; -60В; -3,9А; Idm: -32А; 1,2Вт; SO8 Технические параметры
- Case: SO8
- Channel kind: enhanced
- Drain current: -3.9A
- Drain-source voltage: -60V
- Gate-source voltage: ±20V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.055Ω
- Polarisation: unipolar
- Power dissipation: 1.2W
- Pulsed drain current: -32A
- Type of transistor: P-MOSFET x2