Транзистор: P-MOSFET x2; полевой; -60В; -2,7А; Idm: -24А; 1,2Вт; SO8 Технические параметры
- Case: SO8
- Channel kind: enhanced
- Drain current: -2.7A
- Drain-source voltage: -60V
- Gate-source voltage: ±20V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.105Ω
- Polarisation: unipolar
- Power dissipation: 1.2W
- Pulsed drain current: -24A
- Type of transistor: P-MOSFET x2