Транзистор: N-MOSFET; CoolSiC™; полевой; 1200В; 36А; Idm: 130А Технические параметры
- Case: PG-TO247-4
- Channel kind: depleted
- Drain current: 36A
- Drain-source voltage: 1.2kV
- Features of semiconductor devices: Kelvin terminal
- Gate-source voltage: -10...20V
- Kind of package: tube
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 59mΩ
- Polarisation: unipolar
- Power dissipation: 114W
- Pulsed drain current: 130A
- Technology: SiC
- Type of transistor: N-MOSFET