Транзистор: N-MOSFET Технические параметры
- Case: TO247-4
- Channel kind: enhanced
- Drain current: 4.7A
- Drain-source voltage: 1.2kV
- Features of semiconductor devices: Kelvin terminal
- Gate-source voltage: -7...23V
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 662mΩ
- Polarisation: unipolar
- Power dissipation: 30W
- Pulsed drain current: 13A
- Technology: SiC
- Type of transistor: N-MOSFET