Транзистор: N-MOSFET; CoolMOS™P7; полевой; 650В; 6А; Idm: 26А; 22Вт Технические параметры
- Case: PG-TO220 FP
- Channel kind: enhanced
- Drain current: 6A
- Drain-source voltage: 650V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 360mΩ
- Polarisation: unipolar
- Power dissipation: 22W
- Pulsed drain current: 26A
- Technology: CoolMOS™ P7
- Type of transistor: N-MOSFET