Транзистор: N-MOSFET; CoolMOS™P7; полевой; 700В; 7,5А; Idm: 34А Технические параметры
- Case: PG-TO220 FP
- Channel kind: enhanced
- Continuous Drain Current (Id): 12.5A
- Drain current: 7.5A
- Drain-source voltage: 700V
- Drain-Source Voltage (Vds): 700V
- Fall Time: 18ns
- Features of semiconductor devices: ESD protected gate
- Gate-Source Voltage: 16V
- Gate-source voltage: ±16V
- Height Units: 3
- Manufacturer: Infineon
- Mounting: THT
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 360mΩ
- On-State Resistance: 360mΩ
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -40°C
- Package Type: TO-220FP
- Packaging: Tube
- Phases: Single
- Polarisation: unipolar
- Power dissipation: 26.5W
- Power Dissipation (Pd): 26.5W
- Pulsed drain current: 34A
- Reflow Temperature Max.: 260°C
- Rise Time: 8ns
- Technology: CoolMOS™ P7
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 100ns
- Turn-ON Delay Time: 19ns
- Type of transistor: N-MOSFET
