Технические параметры
- Technology: CoolMOS™ P7
- Drain current: 2.7A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 800V
- Pulsed drain current: 8.9A
- Features of semiconductor devices: ESD protected gate
- Mounting: THT
- Case: PG-TO220 FP
- Type of transistor: N-MOSFET
- On-State Resistance: 1.4Ω
- Power dissipation: 24W