Транзистор: N-MOSFET; CoolMOS™P7; полевой; 800В; 2,7А; Idm: 8,9А Технические параметры
- Case: PG-TO220 FP
- Channel kind: enhanced
- Drain current: 2.7A
- Drain-source voltage: 800V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 1.4Ω
- Polarisation: unipolar
- Power dissipation: 24W
- Pulsed drain current: 8.9A
- Technology: CoolMOS™ P7
- Type of transistor: N-MOSFET