Технические параметры
- Technology: OptiMOS® -P2
- Drain current: -110A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: -40V
- Pulsed drain current: -480A
- Mounting: SMD
- Case: PG-TO263-3-2
- Type of transistor: P-MOSFET
- On-State Resistance: 3.5mΩ
- Power dissipation: 136W