Транзистор: P-MOSFET; OptiMOS® -P2; полевой; -40В; -110А; 136Вт Технические параметры
- Case: PG-TO263-3-2
- Channel kind: enhanced
- Drain current: -110A
- Drain-source voltage: -40V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: SMD
- On-State Resistance: 3.5mΩ
- Polarisation: unipolar
- Power dissipation: 136W
- Pulsed drain current: -480A
- Technology: OptiMOS® -P2
- Type of transistor: P-MOSFET