Транзистор: P-MOSFET; OptiMOS® -P2; полевой; -30В; -90А; Idm: -360А Технические параметры
- Case: PG-TO252-3-11
- Channel kind: enhanced
- Drain current: -90A
- Drain-source voltage: -30V
- Gate-source voltage: -5...16V
- Manufacturer: Infineon
- Mounting: SMD
- On-State Resistance: 4.1mΩ
- Polarisation: unipolar
- Power dissipation: 137W
- Pulsed drain current: -360A
- Technology: OptiMOS® -P2
- Type of transistor: P-MOSFET